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Description
In order to produce a high-efficiency solar cell, it is necessary to increase the passivation effect of the solar cell. Tunnel oxide passivated contact (TOPCon) cell prevents the recombination of carriers by selective carriers collection through tunnelling effect of a very thin silicon oxide layer. In this study, the passivation characteristics of the tunnel oxide layer were observed by growing the ultra-thin SiOx layer with ozone oxidation. It was done under the O3 environment at 300 to 500 ℃ with 10.5 to 21 wt% of concentration at 50 torr. The passivation effect of the SiOx layer was compared with the J0 and the implied Voc through quasi-steady-state photoconductance (QSSPC). Moreover, the sub-oxide ratio of the SiOx layer was obtained from X-ray photoelectron spectroscopy (XPS) analysis. In order to evaluate the applicability of TOPCon cell, electrical characteristics were measured with polysilicon on oxide (POLO) junction. iVoc was measured to be 694mV which proved the applicability of TOPCon structure.
