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SUMMARY:Structural properties of Indium and Indium + Carbon implanted Germ
 anium
DTSTART;VALUE=DATE-TIME:20141120T063000Z
DTEND;VALUE=DATE-TIME:20141120T080000Z
DTSTAMP;VALUE=DATE-TIME:20260712T185225Z
UID:indico-contribution-700@events01.synchrotron.org.au
DESCRIPTION:Speakers: Ruixing Feng (Australian National University)\nGe ha
 s been considered as a potential alternative material for silicon in fabri
 cating future advanced CMOS devices due to its high hole mobility and low 
 dopant activation temperature. Here we study the effect of In concentratio
 n on the structural and electrical properties of Ge with or without C co-i
 mplantation. By using extended x-ray absorption fine structure and x-ray a
 bsorption near-edge spectroscopy\, we found that in the case of In implant
 ed Ge\, In atoms occupy a substitutional site in the Ge lattice with In co
 ncentration ≤ 0.3 at. %\, yet when In concentration is ≥ 1 at. %\, In 
 precipitates to from metallic particles as confirmed by transmission elect
 ron microscopy\, evidence of an In – Vacancy complex is also apparent wi
 th EXAFS. With C co-implantation\, x-ray absorption spectra show that In p
 recipitation was suppressed when the In and C concentration are ≥ 1 at. 
 % (also supported by transmission electron microscopy)\, and evidence of I
 n – C pairing formation was found in EXAFS. Hall Effect measurement also
  showed that the carrier density significantly increased and In atom activ
 ation was improved with C co-implantation. Density Functional Theory was a
 pplied to calculate the binding energies of In – In\, In – Vacancy and
  In – C clusters\, and it was found that In atoms should prefer to pair 
 with vacancies and C in Ge. Density Functional Theory was also used to sim
 ulate the lattice structure of the samples to compare and support the simu
 lated structure from x-ray absorption spectra.\n\nhttps://events01.synchro
 tron.org.au/event/3/contributions/700/
LOCATION: NCSS Exhibition Area
URL:https://events01.synchrotron.org.au/event/3/contributions/700/
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