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SUMMARY:Ion irradiation induced porosity in Germanium
DTSTART;VALUE=DATE-TIME:20141120T063000Z
DTEND;VALUE=DATE-TIME:20141120T080000Z
DTSTAMP;VALUE=DATE-TIME:20260815T132945Z
UID:indico-contribution-699@events01.synchrotron.org.au
DESCRIPTION:Speakers: Huda Alkhaldi (ANU)\nIon irradiation of crystalline 
 germanium (c-Ge) results in the formation of a porous surface\, and someti
 mes buried porous layer. The controlled fabrication of such porous structu
 res has potential applications in lighting\, gas detection and catalytic a
 pplications. In the present work\, we employ a combination of complimentar
 y characterisation techniques to better understand the crystalline-to-poro
 us transformation in Ge as a function of implantation conditions (fluence 
 and temperature). The project is also being extended to include the Si1-x 
 Gex alloy.\nPost-implantation optical profiling indicated that significant
  swelling of the irradiated layer occurs (up to 400 nm)\, consistent with 
 the formation of a porous surface layer. The optical result also showed ev
 idence of a four stage swelling process with ion fluence for pure Ge\, whe
 reas the alloys with different fraction of Ge (90\, 80\, and 77%) show two
  different stages of swelling (up to 100 nm). It has been observed by util
 izing Raman spectroscopy that the structural properties of the porous laye
 rs were also dependent on the ion fluence and temperature as evidenced by 
 changes in the position and width of the characteristic phonon bands. Scan
 ning electron microscopy is also applied to study the morphology as a func
 tion of ion fluence and temperature for different concentration of Ge. The
  pore shape and depth damage distribution has been investigated by using T
 ransition electron microscopy. Small angle x-ray scattering measurements p
 rovided further evidence of an implant temperature-dependent.\n\nhttps://e
 vents01.synchrotron.org.au/event/3/contributions/699/
LOCATION: NCSS Exhibition Area
URL:https://events01.synchrotron.org.au/event/3/contributions/699/
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