BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//CERN//INDICO//EN
BEGIN:VEVENT
SUMMARY:Gamma irradiation effect on optical and laser damage performance o
 f KDP crystals
DTSTART;VALUE=DATE-TIME:20160204T231500Z
DTEND;VALUE=DATE-TIME:20160204T233000Z
DTSTAMP;VALUE=DATE-TIME:20260608T204005Z
UID:indico-contribution-528@events01.synchrotron.org.au
DESCRIPTION:Speakers: Xiaodong Yuan (Research Center of Laser Fusion\, Chi
 na Academy of Engineering Physics)\nKDP (KH2PO4) is a nonlinear transparen
 t dielectric crystalline material used in various laser systems for harmon
 ic generation. It has been used for inertial confinement fusion in the Nat
 ional Ignition Facility\, USA. However\, the physical and chemical propert
 ies of the KDP crystals may degrade under γ and neutron radiations. There
 fore\, it is important to understand the effects of radiations on the opti
 cal properties especially laser induced damage performance during subseque
 nt laser irradiation. \nIn this work\, the effect of Co60 gamma-ray irradi
 ation on KDP crystal with the dose in a range from 1 kGy to 100 kGy is inv
 estigated using UV-Vis absorption\, fluorescence\, DC electrical conductiv
 ity\, positron annihilation lifetime\, and laser induced damage threshold 
 (LIDT). A wide absorption band between 250 and 400 nm appears after γ-irr
 adiation and its intensity increases with the increasing irradiation dose.
  The dc electrical conductivity of γ-irradiated KDP crystals increases wi
 th the increasing irradiation dose when the dose is less than 10 kGy while
  it remains constantly with the irradiation dose beyond 100 kGy. The incre
 ase of electrical conductivity is associated with the increase of proton d
 efect concentration in the crystal and the related mechanism is discussed.
  The positron annihilation lifetime spectroscopy is also used to reveal th
 e evolution of vacancy-type defects in KDP crystal. The decrease of LIDT a
 nd size of vacancy-type clusters with the increasing irradiation dose is a
 lso investigated.\n\nShort Bio: Wanguo Zheng is the Project Leader of SG-I
 II laser facility in China. He is also the Deputy Director of Research Cen
 ter for Laser Fusion\, China Academy of Engineering Physics. He received h
 is PhD degree in Optical Engineering at Fudan University. In 2011\, he was
  awarded The 14th Qiushi Outstanding Young Scientist of China Association 
 for Science and Technology. His research interests focuses on optical mate
 rials and large-aperture optical components\, laser engineering and high-p
 ower laser technology\, and radiation effects of materials. He has publish
 ed more than 100 scientific papers in international peer-reviewed journals
 .\n\nhttps://events01.synchrotron.org.au/event/19/contributions/528/
LOCATION:
URL:https://events01.synchrotron.org.au/event/19/contributions/528/
END:VEVENT
END:VCALENDAR
